A new technical paper titled “Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors” ...

IIT Bhubaneswar, in collaboration with MOSart Labs, has introduced a diploma program in semiconductor technology and chip ...

The IIT Bhubaneswar course is for those students who have completed their engineering in electronics and communication, electrical and computer science, including those who are also engaged in jobs in ...

Edge computing devices, devices located in proximity to the source of data instead of in large data centers, could perform computations locally. This could reduce latency, particularly in real-time ...

Ultrathin nanoscale 3D transistors made out of advanced semiconductor materials operate more efficiently than silicon-based ...

Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated ...

Researchers are leveraging quantum mechanical properties to overcome the limits of silicon semiconductor technology.

Their best results from such a design offered a sub-threshold swing of 86 ... not the millions of densely packed transistors seen in modern integrated circuits. Le Van-Jodin observed that 2D materials ...

(Source MIT) As researchers continue to find new ways of making modern devices smaller, a team from MIT has developed a new transistor that is not only fast but is incredibly tough and far smaller ...

The trick lies in the bidirectional blocking transistors, which can seize all of the benefits of this design. Current practice for electric vehicles is to have active rectifiers operating at high ...