According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

Opening on 22 May to much fanfare, KLA’s £138 million facility sits at the heart of the cluster, in an industrial area on the ...

Advances in TMD growth Building on our success in scaling ultra-wide bandgap materials, we have made significant progress in expanding scalable growth of two-dimensional (2D) materials, specifically ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...