According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

Opening on 22 May to much fanfare, KLA’s £138 million facility sits at the heart of the cluster, in an industrial area on the ...

The cost of SiC substrates needs to come down. But are we going to hamper these efforts by imposing limits on the thickness ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

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Altum RF will show its latest RF and mmWave products and technical expertise at IMS 2025, to be held in San Francisco, US.15 ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...