This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

Engineers and researchers who work with diamond for quantum sensors, power electronics or thermal management technologies ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...

Opening on 22 May to much fanfare, KLA’s £138 million facility sits at the heart of the cluster, in an industrial area on the ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

The cost of SiC substrates needs to come down. But are we going to hamper these efforts by imposing limits on the thickness ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...

AlN vs BN The obvious candidate material for providing cathodoluminescence is AlN, a key semiconductor for producing deep UV ...