A new technical paper titled “Embedding security into ferroelectric FET array via in situ memory operation” was published by researchers at Pennsylvania State University, University of Notre Dame, ...
As with any electronic system, errors in the memory subsystem are possible due to design failures/defects or electrical noise in any one of the components. These errors are classified as either ...
One-time-programmable (OTP) nonvolatile storage arrays based on antifuse programming elements and floating-gate storage cells are now available as blocks of intellectual property (IP). The IP comes by ...
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