A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa manufactures. A major advancement in a commercially viable new ...
Researchers at US-based Technology and Devices International (TDI) have created a gallium nitride (GaN) bulk substrate, which they say will improve the performance and lifetimes of GaN-based device ...
Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...
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